Prof. Philippe Godignon

Prof. Philippe Godignon obtained in PhD in Electronics Engineering from the Institut des Sciences Appliquées de Lyon (INSA) in 1993. He joined the power group of CNM-CSIC in 1990 during his PhD, where he developed most of his research carrier. Since 1990, he has been mainly working on Si and SiC IGBT/VDMOS devices design and technologies as well as on GaN on Si HEMT and more recently on Diamond power diodes. As head of the Wide Band Gap group, his competences cover the power devices and integrated circuits technological and electrical modelling, technological process development as well as the electro-thermal characterisation. More recently, he has also been working on Carbon based materials synthesis and processing (CNT, graphene and polymers) for nanotechnologies and biosensors. He published 183 papers in international per review journals. He is co-author of 215 contributions to international and national conferences. Many of these journals publications and conferences contributions were done in collaboration with more than 40 different European research laboratories and companies. In 2017, he is co-editor of a book on epitaxial graphene. During the last 25 years, he has participated to 21 national and 26 European research projects, 18 of them as main IP. He has also been involved in 22 contracts with companies. He also co-authored 12 patents and participate to the creation of 2 spin-off companies, Caly Technologies and Graphene Nanotech. He supervised 16 PhD students. He is member of the steering committee of the ECSCRM conference and of the Technical Committee of the IEEE ISPSD, the two main annual international conferences of his main field of research.