Aniol Vellvehí was born in 1999 in Mataró (Barcelona). He received his Bachelor’s degree in Nanoscience and Nanotechnology from the Autonomous University of Barcelona (UAB) in 2021, and his Master’s degree in Renewable Energies and Energetical Sustainability from University of Barcelona (UB) in 2022. During 2023 he worked as a laboratory technician in the Group of Thin Film Structures for Energy and Telecommunications of the UB, mainly working on development of selective contacts and active layers for energy devices. In 2024 he joined the Centre Nacional de Microelectrònica (IMB-CNM-CSIC) as process engineer of CMOS technology and the Ion Implantation area in the clean room. In 2025 he joined the Power Devices and Systems group in IMB-CNM (CSIC) working on development of advanced ultra-wide bandgap devices based in gallium oxide for high power electronics within the European SAFEPOWER project..