David Flores (Martorell 1967) received the B.S degree in Physics from the Universitat Autònoma de Barcelona (UAB) in 1990 and the Ph.D degree in Physics at UAB in 1995 with his dissertation addressing the development of new MOS-Thyristor high voltage power devices. He joined the Power Devices & Systems Group of the Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC) where he got a permanent research position in 1999. His research activities include modelling and simulation of Silicon power devices (from diodes and thyristors to superjunction MOSFET and IGBT) in combination with process technology set up.

He also has a research activity on Silicon radiation sensors for high-energy physics and power devices for harsh environments. He has authored and co-authored more than 260 research papers in international journal and conferences and supervised 7 Ph.D students.