José Montserrat obtained the B.S. and the Ph.D. degrees in physics from the University of Barcelona (Spain) in 1985 and 1991, respectively. In 1987 he joined the IMB-CNM (CSIC). From 1987 to 2012 he worked as process engineer in the Clean Room Facility. He was responsible of ion implantation and metallization areas. His main research interest was in silicon technology for the manufacture of CMOS integrated circuits, sensors and power devices.

In 2012 he joined the Power Devices and Systems Group, and now his main research activity is in the manufacture of power devices using wide band gap semiconductors. He has published more than 100 papers in scientific journals. He has participated in several EU funded projects and industrial contracts including technology transfer, as well as R&D projects funded by the Spanish Administration.