Miquel Vellvehi (Mataró 1968) received the B.S degree in Physics from the UniversitatAutònoma de Barcelona in 1992 and the Ph.D degree in Electrical Engineering at the same university in 1997 with his dissertation addressing the analysis of the thermal behaviour of Lateral Insulated Gate Bipolar Transistors In 1993 he joined the Power Devices & Systems Group of the Institut de Microelectrònica de Barcelona del Centre Nacional de Microelectrònica (IMB-CNM,CSIC) in Cerdanyola del Vallès (Spain).

In 2007 he gained a permanent position at CNM-CSIC. From 1993 to 1998, his research activities include technology, modelling, and numerical simulation of MOS-controlled power semiconductor devices. Since 1999, his main research activity deals with electro-thermal characterization and modellisation of power semiconductor devices and circuits. He has authored and co-authored more than 100 research papers in journal and conferences.

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