RECENT PUBLICATIONS
Multiscale Thermal Modelling of Integrated Motor Drives with PCB-Embedded SiC Power Devices
Mattia Grespan, Sergio Busquets-Monge, Elisabet Mas de les Valls, Salvador Alepuz, Mariana Raya, Xavier Jordà, Davide Barater, Diego Angeli. Applied Thermal Engineering 2026, 131094, vol. 298, Part 3 Integrated motor drives are frequently employed in vehicles and aircraft due to their superior power density and efficiency in comparison to separate motors and drives. These advantages […]
Single-Event Burnout Mitigation in Silicon VDMOS Power Devices: An Electro-Thermal TCAD Study
Eusebio Rodrigo, José Rebollo, Xavier Jordà, José Camps, Llorenç Latorre and Miquel Vellvehi. Electronics 2026, 15, 1201 Single-Event Burnout (SEB) is one of the most critical failure mechanisms in silicon powerMOSFETs operating in radiation environments, particularly under heavy-ion irradiation,and often limits device operation through excessive voltage derating. In this work, SEBrobustness of a silicon VDMOS […]
Measurement uncertainty in Fourier coefficient-based time series reconstruction considering calibration effects in thermal imaging
Roger Solé, Conrad Ferrer, Oriol Aviñó-Salvadó, Xavier Jordà, Xavier Perpiñà. IEEE Transactions on Instrumentation and Measurement A robust methodology is proposed for determining and assessing measurement uncertainties in thermal imaging systems when the Fourier coefficient-based time-reconstructed method is used. This comprehensive approach addresses factors such as camera-induced noise, setup-related errors, and data postprocessing strategies. As […]
Physics-based Strategies for Fast TDDB Testing & Lifetime Estimation in SiC Power MOSFETs
O. Aviñó-Salvadó, C. Buttay, F. Bonet, C. Raynaud, P. Bevilacqua, J. Rebollo, H. Morel, X. Perpiñà IEEE Transactions on Industrial Electronics To expedite testing, Time-Dependent Dielectric Breakdown (TDDB) analyses are conducted on commercial 4H-SiC MOSFETs at high gate-to-source voltages, under Fowler-Nordheim conduction only. However, as inferred, such conditions induce impact ionization-generated holes in the dielectric […]
Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics
Conrad Ferrer, Oriol Aviñó, Miquel Vellvehi, Xavier Jordà, Xavier Perpiñà IEEE Transactions on Instrumentation and Measurement A novel solution for off-chip electro-thermal studies in power devices at die level and short timescales is reported. The proposed method involves acquiring a sequence of thermal images on the top of the die with an infrared (IR) camera, […]
Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding
F. Bonet , O. Aviñó-Salvadó , Member, IEEE, M. Vellvehi , X. Jordà , P. Godignon , and X. Perpiñà IEEE Electron Device Letters Die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection set-up. To this end, the 4H-SiC plasmaoptical coefficient for the refractive index is reported for the first time. […]
Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits
M. Vellvehi, X. Perpiñà, J. León, O. Aviñó-Salvadó, C. Ferrer and X. Jordà IEEE Transactions on Industrial Electronics The thermal resistance of a High Electron Mobility Transistor (HEMT) forming part of a Monolithic Microwave Integrated Circuit (MMIC) is non-invasively extracted under real working conditions (electrical and thermal) by infrared thermal imaging. The HEMT thermal resistance considers […]
Origin of the Large Negative Electrocaloric Effect in Antiferroelectric PbZrO3
P. Vales-Castro, R. Faye, M.Vellvehi, Y.Nouchokgwe, X. Perpiñà, J.M.Caicedo, X. Jordà, K. Roleder, D. Kajewski, A. Perez-Tomas, E. Defay, G. Catalan Physical Review B We have studied the electrocaloric response of the archetypal antiferroelectric PbZrO3 as a function of voltage and temperature in the vicinity of its antiferroelectric-paraelectric phase transition. Large electrocaloric effects of opposite […]