RECENT PUBLICATIONS
Impact of Si ion implantation on α-Ga2O3 and β-Ga2O3 lateral MESFET transistors
Aniol Vellvehí, Pierre Gallarday, Edgars Butanovs, Vincent Sallet, José Rebollo, Josep Montserrat, Edvards Strods, Martins Zubkins, Lauris Dimitrocenko, Corine Sartel, Ekaterine Chikoidze, Xavier Perpiña, Miquel Vellvehi, Amador Pérez-Tomás Journal of Alloys and Compounds In this work, the feasibility of Si ion-implantation channel engineering in metastable α-Ga2O3 is directly compared with the well-established implantation process used […]
Quantum Power Electronics—The Ultimate Path for Optimal Power Conversion?
Sergio Busquets-Monge , Salvador Alepuz , Joan Nicolàs-Apruzzese , Xavier Jordà , Mariana Raya, Àlber Filbà-Martínez and Gabriel Garcia-Rojas IEEE Transactions on Power Electronics Advances in power electronics play a fundamental role in achieving the technological objectives that society pursues in terms of sustainable use of energy. One promising path to search for notable advances […]
Multiscale Thermal Modelling of Integrated Motor Drives with PCB-Embedded SiC Power Devices
Mattia Grespan, Sergio Busquets-Monge, Elisabet Mas de les Valls, Salvador Alepuz, Mariana Raya, Xavier Jordà, Davide Barater, Diego Angeli. Applied Thermal Engineering 2026, 131094, vol. 298, Part 3 Integrated motor drives are frequently employed in vehicles and aircraft due to their superior power density and efficiency in comparison to separate motors and drives. These advantages […]
Single-Event Burnout Mitigation in Silicon VDMOS Power Devices: An Electro-Thermal TCAD Study
Eusebio Rodrigo, José Rebollo, Xavier Jordà, José Camps, Llorenç Latorre and Miquel Vellvehi. Electronics 2026, 15, 1201 Single-Event Burnout (SEB) is one of the most critical failure mechanisms in silicon powerMOSFETs operating in radiation environments, particularly under heavy-ion irradiation,and often limits device operation through excessive voltage derating. In this work, SEBrobustness of a silicon VDMOS […]
Measurement uncertainty in Fourier coefficient-based time series reconstruction considering calibration effects in thermal imaging
Roger Solé, Conrad Ferrer, Oriol Aviñó-Salvadó, Xavier Jordà, Xavier Perpiñà. IEEE Transactions on Instrumentation and Measurement A robust methodology is proposed for determining and assessing measurement uncertainties in thermal imaging systems when the Fourier coefficient-based time-reconstructed method is used. This comprehensive approach addresses factors such as camera-induced noise, setup-related errors, and data postprocessing strategies. As […]
Physics-based Strategies for Fast TDDB Testing & Lifetime Estimation in SiC Power MOSFETs
O. Aviñó-Salvadó, C. Buttay, F. Bonet, C. Raynaud, P. Bevilacqua, J. Rebollo, H. Morel, X. Perpiñà IEEE Transactions on Industrial Electronics To expedite testing, Time-Dependent Dielectric Breakdown (TDDB) analyses are conducted on commercial 4H-SiC MOSFETs at high gate-to-source voltages, under Fowler-Nordheim conduction only. However, as inferred, such conditions induce impact ionization-generated holes in the dielectric […]
Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics
Conrad Ferrer, Oriol Aviñó, Miquel Vellvehi, Xavier Jordà, Xavier Perpiñà IEEE Transactions on Instrumentation and Measurement A novel solution for off-chip electro-thermal studies in power devices at die level and short timescales is reported. The proposed method involves acquiring a sequence of thermal images on the top of the die with an infrared (IR) camera, […]
Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding
F. Bonet , O. Aviñó-Salvadó , Member, IEEE, M. Vellvehi , X. Jordà , P. Godignon , and X. Perpiñà IEEE Electron Device Letters Die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection set-up. To this end, the 4H-SiC plasmaoptical coefficient for the refractive index is reported for the first time. […]