WELCOME
WELCOME TO
Power Devices and Systems Group
The Power Devices and Systems Group of IMB-CNM was established in 1985, has developed his research
continuously since then and currently consists of 20 people.
The Group has been considered and financed as a Consolidated Research Group by the
Generalitat de Catalunya (2021-SGR-00496) in all calls for these grants since its creation (from 2000 to date).
Its activity focuses on the design, fabrication, characterization and integration of power semiconductor devices, optimized for developing reliable and energy efficient converters and electronic systems, operating even in harsh environments (high temperature, radioactive environments, etc.).
The devices developed by the group on different semiconductors (Si, SiC, GaN, diamond), are fabricated in the Clean Room of the IMB-CNM and cover various application fields (traction, protection, high frequency, space, high energy, etc.).
The research work of the Group also aims to transfer the developed technology to national and international industry sector. The Group has three main research lines:
· Silicon Power Devices
· Wide Bandgap Semiconductor Devices
· Power Systems Integration and Reliability.
IMB-CNM through its Power Devices and Systems Group (PDS)
is part of the following platfoms:
PTI+ TransEner as a research group working in the Electrification temathic area.
More info: https://pti-transener.csic.es/
ECPE – European Center for Power Electronics as a competence center.
More info: https://www.ecpe.org/
FUTURED – Plataforma Tecnológica Española de Redes Eléctricas as a research center:
More info: https://www.futured.es/en
XRE4S – R+D+I Network Energy for Society as research center:
More info: https://xre4s.cat
