Xiaoqun Shi was born in 1998 in Nanjing, China. He obtained a BSc in Materials Science and Engineering through the University of Sheffield and an MPhil in Materials Science and Engineering from the University of Sheffield in 2025.

During his MPhil, he investigated lithium-rich, high-nickel cathode materials for high-energy-density lithium-ion batteries. His research focused on the synthesis and modification of Li₂NiO₃-based materials and on understanding the relationships between their crystal structures, electrochemical properties and degradation mechanisms. He gained experience in materials synthesis, electrochemical testing and advanced characterization techniques, including X-ray diffraction, Rietveld refinement, scanning electron microscopy, X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.

Since July 2026, he has been a predoctoral fellow with the Power Devices and Systems (PDS) Group at IMB-CNM (CSIC), supported by the María de Maeztu programme. His research focuses on the development of ultra-wide-bandgap β-Ga₂O₃ power semiconductor devices. In particular, he is investigating high-permittivity dielectric field-plate structures and advanced Schottky-contact engineering strategies to improve electric-field management, breakdown performance and device reliability.