M. Fernández, X. Perpiñá, J. Roig, M. Vellveh, F. Bauwens, M. tack and X. Jordà. IEEE Transactions on Industrial Electronics, 64 (11), pp. 9012-9022 (2017) This paper studies by experimentation and physics-based simulation the Short-Circuit (SC) capability of several normally-off 600-650 V Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs): cascodes, p-GaN,...
