Mattia Grespan, Sergio Busquets-Monge, Elisabet Mas de les Valls, Salvador Alepuz, Mariana Raya, Xavier Jordà, Davide Barater, Diego Angeli.Applied Thermal Engineering 2026, 131094, vol. 298, Part 3Integrated motor drives are frequently employed in vehicles and aircraft due to their superior power density and efficiency in comparison to separate motors and...
Single-Event Burnout Mitigation in Silicon VDMOS Power Devices: An Electro-Thermal TCAD Study
Eusebio Rodrigo, José Rebollo, Xavier Jordà, José Camps, Llorenç Latorre and Miquel Vellvehi.Electronics 2026, 15, 1201Single-Event Burnout (SEB) is one of the most critical failure mechanisms in silicon powerMOSFETs operating in radiation environments, particularly under heavy-ion irradiation,and often limits device operation through excessive voltage derating. In this work, SEBrobustness of...
Measurement uncertainty in Fourier coefficient-based time series reconstruction considering calibration effects in thermal imaging
Roger Solé, Conrad Ferrer, Oriol Aviñó-Salvadó, Xavier Jordà, Xavier Perpiñà. IEEE Transactions on Instrumentation and Measurement A robust methodology is proposed for determining and assessing measurement uncertainties in thermal imaging systems when the Fourier coefficient-based time-reconstructed method is used. This comprehensive approach addresses factors such as camera-induced noise, setup-related errors,...
Physics-based Strategies for Fast TDDB Testing & Lifetime Estimation in SiC Power MOSFETs
O. Aviñó-Salvadó, C. Buttay, F. Bonet, C. Raynaud, P. Bevilacqua, J. Rebollo, H. Morel, X. Perpiñà IEEE Transactions on Industrial Electronics To expedite testing, Time-Dependent Dielectric Breakdown (TDDB) analyses are conducted on commercial 4H-SiC MOSFETs at high gate-to-source voltages, under Fowler-Nordheim conduction only. However, as inferred, such conditions induce impact...
Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics
Conrad Ferrer, Oriol Aviñó, Miquel Vellvehi, Xavier Jordà, Xavier Perpiñà IEEE Transactions on Instrumentation and Measurement A novel solution for off-chip electro-thermal studies in power devices at die level and short timescales is reported. The proposed method involves acquiring a sequence of thermal images on the top of the die...
Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding
F. Bonet , O. Aviñó-Salvadó , Member, IEEE, M. Vellvehi , X. Jordà , P. Godignon , and X. Perpiñà IEEE Electron Device Letters Die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection set-up. To this end, the 4H-SiC plasmaoptical coefficient for the refractive index...
Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits
M. Vellvehi, X. Perpiñà, J. León, O. Aviñó-Salvadó, C. Ferrer and X. Jordà IEEE Transactions on Industrial Electronics The thermal resistance of a High Electron Mobility Transistor (HEMT) forming part of a Monolithic Microwave Integrated Circuit (MMIC) is non-invasively extracted under real working conditions (electrical and thermal) by infrared thermal imaging....
Origin of the Large Negative Electrocaloric Effect in Antiferroelectric PbZrO3
P. Vales-Castro, R. Faye, M.Vellvehi, Y.Nouchokgwe, X. Perpiñà, J.M.Caicedo, X. Jordà, K. Roleder, D. Kajewski, A. Perez-Tomas, E. Defay, G. Catalan Physical Review B We have studied the electrocaloric response of the archetypal antiferroelectric PbZrO3 as a function of voltage and temperature in the vicinity of its antiferroelectric-paraelectric phase transition....