M. Cabello, V. Soler, G. Rius, J. Montserrat, J. Rebollo and P. Godignon Materials Science in Semiconductor Processing (2017) This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality of the SiO2/SiC interface severely limits the value of the channel field-effect mobility, especially in 4H-SiC MOSFETs. Several strategies have been addressed...
