O. Aviñó-Salvadó, C. Buttay, F. Bonet, C. Raynaud, P. Bevilacqua, J. Rebollo, H. Morel, X. Perpiñà IEEE Transactions on Industrial Electronics To expedite testing, Time-Dependent Dielectric Breakdown (TDDB) analyses are conducted on commercial 4H-SiC MOSFETs at high gate-to-source voltages, under Fowler-Nordheim conduction only. However, as inferred, such conditions induce impact...
