M. Fernández, X. Perpiñá, J. Roig, M. Vellveh, F. Bauwens, M. tack and X. Jordà.
IEEE Transactions on Industrial Electronics, 64 (11), pp. 9012-9022 (2017)
This paper studies by experimentation and physics-based simulation the Short-Circuit (SC) capability of several normally-off 600-650 V Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs): cascodes, p-GaN, and GaN Metal-Insulator-Semiconductor HEMTs (MISHEMTs). As a result, cascodes present the worst SC ruggedness. By contrast, p-GaN gate HEMTs and MISHEMTs provide a higher SC capability thanks to their strong drain current reduction. In addition, a valuable state-of-the-art about all commercially available technologies is also provided, which demonstrates that current GaN devices do not allow SC capability.
Mastering Sprunki Betters And Loses Anti Shifted is so rewarding. The music sync with the enemy patterns (or animations) is chef’s kiss. Pro tip: watch for the tempo changes!
Trying out Sprunki Betters And Loses Anti Shifted right now. That beat drop in the middle is fire! Love how the characters react to the rhythm. Definitely my new favorite phase.
Mastering Sprunki Phase 10000 is so rewarding. The music sync with the enemy patterns (or animations) is chef’s kiss. Pro tip: watch for the tempo changes!