F. Bonet , O. Aviñó-Salvadó , Member, IEEE, M. Vellvehi , X. Jordà , P. Godignon , and X. Perpiñà

IEEE Electron Device Letters

Die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection set-up. To this end, the 4H-SiC plasmaoptical coefficient for the refractive index is reported for the first time. A SiC Schottky diode with an edge termination based on a junction termination extension is used as a test vehicle. Under biasing conditions, the edge termination starts a local bipolar conduction along the device active area  perimeter, leading to current crowding effects. Using refractive index measurements, a depth-resolved carrier profile is extracted and assessed using both, simulation and Free Carrier Absorption measurements.

Link DOI: 10.1109/LED.2022.3171112