From September 22 to 24, members of the PDS Group — Amador Pérez-Tomás, Pierre Gallarday, and Aniol Vellvehi — took part in the 8th International Workshop on Ultra-Wide Bandgap Materials and Devices (IWUMD2025), held in Wroclaw, Poland. Amador Pérez-Tomás presented the work “Tuning Silicon Implantation for α-Ga₂O₃ and β-Ga₂O₃ MESFET Transistors”, which focuses on the development of Si-doped α-Ga₂O₃ layers using an ALD Al₂O₃ capping method. This technique allows high-temperature annealing compatible with β-Ga₂O₃ processing, aiming to activate doping efficiently in both phases. The study addresses key aspects such as drift conductivity, Ohmic contact formation, and dopant activation, and highlights the potential of α-Ga₂O₃ for future high-voltage and UV optoelectronic devices.