On October 6th, Fernando Pierre Gallarday Peve, PhD student at the Power Devices and Systems (PDS) group of IMB-CNM, presented his Master’s Thesis as part of the SAFEPOWER project. His work focused on the development of high-performance lateral power devices based on gallium oxide (Ga₂O₃), one of the most promising emerging semiconductor materials for next-generation power electronics. Over the past months, Fernando has been working on the design and fabrication of photolithography mask sets for high-voltage MESFETs targeting 6.6 kV / 10 A operation, the implementation of advanced planar isolation, field-plate and T-gate structures to mitigate peak electric fields, and the structural and electrical characterization (XRD, SEM/FIB, probe station) of preliminary α- and β-phase MESFETs. This research represents a significant step forward in the SAFEPOWER project’s roadmap, paving the way toward efficient, high-voltage power devices that could transform future applications in energy systems and advanced electronics.