PROJECTS
ON-GOING PROJECTS
Gallium Oxide for Power Semiconductor Devices (GaO4POWER)
Project PID2023-151481OB-I00 MICIUI (Plan Nacional I+D+I – Proyectos de Generación de Conocimiento). The general objective of GaO4POWER project is to establish a proto-commercial semiconductor power electronics technology based on Ga2O3 (which represents the most advanced UWBG nowadays) with will be the first of his kind in Spain, one of the most advanced in EU and in the world. This seminal technology will exhibit the semiconductor properties required for its application in beyond the state-of-the-art high-power rectifiers and MOSFET devices (target is 3-6kV). To achieve the general objective, the project has the technical objective of designing, fabricating and testing of high-power rectifiers and MOSFETs. This include the tailoring of UWBG semiconductor processing such as doping by implantation, etch termination, ohmic/Schottky electrical contacts and passivation/gate dielectrics. Finally, the fabricated device performances will be benchmarked with the state of the art in Si, GaN and SiC. The ambitious scope of the project is to pave the way to a national UWBG semiconductor technology that will have a significant long-term impact on power semiconductor ecosystem with improved voltage blocking capacity, power ratings and overall energy efficiency management. Although several programmes have been already launched in US and Japan, a suitable Ga2O3 based technology is not yet available. The GAO4POWER main breakthroughs are the setting-up of semiconductor fab processes, components and novel architecture solutions for enhanced power devices. Measurable outputs within the lifetime of the project are the design and fabrication of Ga2O3 based Schottky diodes and MOSFET transistors with state-of-the-art performances. To address these breakthroughs, GaO4Power has the following specific objectives: i) Optimization and set up of individual technological process steps needed for device fabrication. Ohmic contact and Schottky contact formations, dielectric layer depositions, dry and wet etching will be deeply investigated. Extensive structural and morphological characterisation will be done, ii) setting up efficient and accurate modelling tools for the design and simulation of Ga2O3 based devices, iii) design and fabrication of Schottky diodes and lateral normally-on MOSFETs transistors with breakdown voltages in the range of 3-6kV. Electro-thermal characterisation will be done and packaging will be also considered and finally iv) analysis of new device architectures for vertical MOSFET devices and normally-off transistors. Study by 2D numerical simulations, together with design and device fabrication. Preliminary packaging and electro-thermal characterisation will also be done.
CNM Principal Investigators: Dr. José Rebollo Palacios and Dr. Amador Pérez-Tomás
Starting date and duration: September 2024 – 3 years
Safer and more Reliable WBG/UWBG-based MVDC Power Converters (SAFEPOWER)
EU Project (Horizon Europe Grant: 101172940). SAFEPOWER will provide key digital, enabling and emerging technologies for a next-generation of compact, sustainable, competitive, and secure MVDC converters. Leveraging the benefits of Control and Health Management (C&HM) techniques and SiC power semiconductor devices performance, the project aims to enhance the converter overall performance, including efficiency, reliability, and power density. The initiative involves the specific design and manufacture of two solutions for cost-effective, rugged, and highly efficient power MOSFETs, free-wheeling diodes and solid-state DC breakers based on Silicon Carbide (SiC) substrates, using both smart-planar and trench technologies. Various C&HM approaches will be explored and implemented. Additionally, the project studies β-Ga2O3 as a potential Ultra-Wide Band Gap (UWBG) material for manufacturing power devices oriented to MVDC converters. This is performed from a system and die level perspective, conducting cutting-edge research on materials fabrication, device design and a final application in MVDC converters. These advancements enable the creation of efficient, cost-effective, and secure converter topologies, also showcased by SAFEPOWER. The converter topologies investigated in SAFEPOWER take full advantage of mature manufacturing processes for SiC devices properly optimised by design to increase their efficiency, power density, and reliability, while its cost and environmental impact reduces. Also, it opens the door to propose advanced modulation strategies, intelligent control schemes, and prognosis and health management thanks to C&HM investigated to further enhance its performance and provide advanced functionalities. All these characteristics will allow in the long term, deploying MVDC converters as a sustainable, reliable, secure and competitive option in line with societal needs and preferences, fostering renewables deployment, especially solar, and promoting an open strategic autonomy by leading the development of key digital enabling and emerging technologies, making Europe the first digitally enabled circular, climate-neutral and sustainable economy, and increasing its leadership.
Project coordinator: Dr. Xavier Perpinyà Giribet
CNM Principal Investigator: Dr. Xavier Perpinyà Giribet
Starting date and duration: October 2024 – 4 years
Forensic Reverse Engineering of Silicon chips (ForRES)
EU Project (Internal Security Fund (ISF) – Call on Cybercrime and Digital investigations [ISF-2022-TF1-AG-CYBER]). The main objective of the ForRES project (Forensic Reverse Engineering of Silicon chips) is to provide European Law Enforcement Agencies (LEAs) with software, techniques and methods to assist in the extraction and analysis of information stored in electronic systems that integrate state-of-the-art semiconductor devices (using FinFET type transistors manufactured with technologies below 28 nm), in order to retrieve such information and provide forensic evidence that can be used in judicial proceedings. The aim of this work is to provide European LEAs with a platform based on techniques that will help to increase and improve the capabilities and expertise of digital forensic experts, with a special focus on smartphones, IoT (Internet of Things) devices and encrypted storage systems. IMB-CNM will be responsible for the technical coordination of the project, together with the study of the security elements integrated in the circuits of interest, by means of reverse engineering techniques. Technical procedures will be defined to allow
their deconstruction and to facilitate the analysis of the layers that form them, in order to reconstruct their functionality, identify their possible weaknesses and establish the steps to follow to access the stored information. In addition, in order to facilitate the reconstruction tasks, software will be developed, based on the use of artificial intelligence (AI) and machine learning techniques (Deep Learning), which will allow the identification of the integrated logical elements, the extraction of high-level logical structures and the reconstruction of the functionality of the blocks that form a circuit.
CNM Principal Investigator: Dr. Salvador Hidalgo Villlena
Starting date and duration: July 2023 – 2 years
Selective deposition of thick metal layers on microelectronic chips for power systems integration (METALCHIP)
Project 2022PDC2022-133790-I00 MCINN (Proyectos I+D+i Pruebas de Concepto). In the current framework of energy transition, the geographical dispersion of renewable sources, their intermittency and unpredictability, an smart energy transport and distribution network is mandatory. One of the key enabling technologies of the smart grid is power electronics and power converters, based on multichip modules of semiconductor devices capable of handling high voltages and currents. The prevailing technology for interconnecting these chips inside the modules is based on wire bondings (usually on aluminium) that prevent the development of new packaging solutions with better efficiency, miniaturization and performances. This situation can be avoided thanks to the remetalization of the upper pads of the devices with solderable metals that allow direct interconnection methods on the chip.The METALCHIP project aims to bring a selective chip metallization method previously developed by the research group to a high level of technological readiness (TRL6-7), with the capability to process a large number of samples at IMB-CNM facilities, obtaining high performance, low dispersion of the deposited thickness, high adherence and good definition of the shape of the deposited pattern. All this would allow not only to be able to provide the industry with a selective metallization service, but also to consider its possible transfer under more favorable conditions and closer to the commercial use of the method. The results of the project will be of interest to companies that are end users of power devices that need to increase their levels of integration, as well as companies in the field of electronic systems integration. The transfer plan that is intended to be developed at the end of the project will make it possible to analyse these options in detail and even identify companies from other fields (chemical sensors, lighting, communication systems, etc.). In addition, as a complement to the aforementioned method focused on the processing of individual chips, the project will also develop a copper chemical deposition bank (electroless) on wafers that opens the possibility for microelectronic manufacturing companies to selectively metallize the terminals of the chips during the manufacturing process.
CNM Principal Investigator: Dr. Xavier Jordà Sanuy
Starting date and duration: December 2022 – 2 years
Switching-Cell-Array-based Power Electronics conversion for future electric vehicles (SCAPE)
EU Project (HE-Grant 101056781) . In power electronics, the traditional design approach of power converters involves a range of power semiconductor devices with different ratings, optimized to operate at different conditions, where different suitable ancillary circuitry and power circuit topologies are also required. This dispersion in power devices and circuits leads to significant engineering efforts, the inability to take full advantage from scale economies to reduce costs, and the inability to concentrate efforts to improve performance. In the electric vehicle (EV) market, this is translated to a lack of standardization on the EV power conversion system designs across the different models and types of vehicles available, meaning that nowadays EV OEMs invest billions of euros to develop their own solutions.
SCAPE aims at achieving three main objectives: i) propose a standardisable, modular, and scalable approach, based on multilevel technology, for the design of the EV power conversion systems ii) develop highly-compact and integrated building-block implementation. iii) propose intelligent modulation and control strategies, online diagnosis, and digital twin for predictive maintenance with machine learning. Reaching these objectives will enable reducing the cost of the EV power electronics thanks to scale economies, improving its performance features (reliability, efficiency, power density, etc.), and enabling advanced functionalities.
This will allow satisfying the user’s needs, increase the acceptance and affordability of zero-emission vehicles, reduce green-house gasses emission, and enable a full-market penetration of the EV. Having this approach adopted by EU automotive manufacturers will allow creating a cost-efficient production chain in the EU based on economies of scale and advanced integration technologies, as a competitive advantage against other manufacturers.
CNM Principal Investigator: Dr. Xavier Jordà Sanuy
Starting date and duration: July 2022 – 4 years
Website: https://www.scapepower.eu/
Intelligent Building Blocks for Smart GRIDs-oriented Switching CELLS Array Power Converters (GRIDCELLS)
Project PID2021-126334OB-I00 MCIN (Plan Nacional I+D+I – Proyectos de Generación de Conocimientos). Resulting from the deep decarbonisation of the main economic sectors of our society, the electric energy demand will significantly increase. Moreover, a more efficient, secure, flexible and affordable energy distribution should be envisaged for the next future to face energy transition in a sustainable way, as electrification coupled with renewable electricity supply is the key pathway. In this framework, Power AC conversion in smart grids is the cornerstone. In response to this, GRIDCELLS aims at enabling the technology for the deployment of smart Switching Cells Array (SCA) converters for smart grids. To this end, power modules, called smart modular switching cells (SCs), will be developed as power converter elementary building blocks. With this mission, GRIDCELLS will investigate into a new approach to design and manufacture smart, modular and rugged SCs based on a new generation of WBG power devices, covering all the value chain (from the die to the system), upgrading and using singular functional characterization systems at die level reproducing real operation conditions for the first time. The main challenges tackled by GRIDCELLS are: 1. SC smartness or intelligence: SCs should integrate sensors and on-line monitoring circuitry, read-out unit, communication capability within the converter supervised by an intelligence provided by a local control (microcontroller) to provide the SC status and allow high level decisions by the SCA main control unit exploiting artificial intelligence solutions. 2. Optimized SC: SCs should present, among other characteristics, good series/paralleling features, longer lifetime expectancy, and opencircuit failure to maximize the leg fault tolerance capacity. This represents a mandatory design issue to be addressed by driver actuation or through the SC design. 3. WBG devices application-oriented qualification tests: WBG power devices selection, as well as their on-line monitored parameters, should be assisted by final application-oriented tests based on advanced local electro-thermal measurements under representative application conditions. With these challenges in mind, the objectives of the GRIDCELLS are: 1. to research and develop smart building blocks or SCs to boost the implementation of smart modular SCA power inverters in smart grids (new power integration concepts); 2. to research and develop characterization strategies required a) to precisely analyze the ruggedness of power devices at die-level and b) to correlate the physical mechanisms of the device failure with its electrical signature, as a means for selecting rugged power devices for smart modular SCA for smart grids; 3. to increase the test coverage for power devices ruggedness qualification with power devices electro-thermal characterization at die-level, and 4. to model a digital twin based on the local electro-thermal information extracted at die-level, mainly oriented to local junction temperature determination. Thus, GRIDCELLS is an ambitious project conceived to lead the research on heterogeneous integration and die-level characterization, not only in Spain, but also in Europe.
CNM Principal Investigator: Dr. Xavier Perpinyà Giribet and Dr. Miquel Vellvehi Hernàndez
Starting date and duration: October 2022 – 3 years
Nuevas configuraciones de puertas para MISFET de Diamante con canal opto-activado: Tecnología y fabricación (OPTOFET)
Project PID2020-117201RB-C22 MCIN (Plan Nacional I+D+I, Retos de la Sociedad)The objective of the present project is to breakthrough current state of the art of high power electronic devices where their performances become more and more important in terms of system integration and reliability, as well as in terms of of weight versus capacity as, for example, for electric systems powering cars, airplanes, etc. The goal of the project is the use of diamond in a disruptive approach: optical activated channel transistors that allow to fully separate the gate from the drain contact for high voltage and to deliver high currents as a result of the dopant activation. This project involves mainly two research groups: University of Cádiz (UCA) and Centro Nacional de Microelectrónica de Barcelona (IMB-CNM-CSIC), and will benefit of their active international collaborations (CNRS-Grenoble and IMEC-Hasselt) for technological fruitful discussions and as a backup if some equipments fails. The activities of this project led by IMB-CNM will be focused, on the one hand, on technological development, to obtain the pieces of the puzzle that will allow the fabrication of the proposed advanced devices. Existing process steps, developed in previous projects, will be completed with new options, such as boron and phosphorus ion implantation, advanced lithography steps and deep plasma etching using new ICP equipment. Another major effort will be devoted to the use of h-BN as a gate dielectric. To this end, h-BN growth and transfer technology will be optimized. In parallel, another task will be to generate and characterize test structures to evaluate the electrical parameters of the p-type and n-type material grown in the subproject1. On the other hand, it will address the sequence of design, fabrication and characterization of 3 types of devices, with an increasing degree of complexity. The design will be supported by numerical simulation, providing critical information for the design of the masks and the specification of the technology parameters. Since optical gate control is a key innovation of this proposal, the optical effects must be complemented by electrical simulations. Once the devices are fabricated, extensive on-wafer electrical and electro-optical characterization will be performed. Optical studies of the undoped diamond must ensure IR transparency before dopant activation can be demonstrated with the IR LED. To complete the evaluation of the devices, an electro-thermal characterization of encapsulated devices will be performed. This last characterization step will provide us with sufficient TRL level, to argue and provide data to semiconductor manufacturers and end users potentially interested in these components for their products and applications.
CNM Principal Investigator: Dr. Josep Montserrat
Starting date and duration: September 2021 – 3 years
Actividades del IMB-CNM para los upgrades de alta luminosidad del LHC: Inner Tracker y Endcap Timing Layer (CMSUPG)
Project PID2020-113705RB-C32 MICIN (Plan Nacional I+D+I, Retos de la Sociedad). This project is a continuation of previous national research projects led by IFCA and is submitted as a coordinated project of three research groups: IFCA (UC-CSIC), IMB-CNM (CSIC) and ITAINNOVA. The main goal of the project is to contribute to the construction of the Inner Tracker and Endcap Timing Layer subdetectors for the upgrade of the CMS (Compact MuonDetector) experiment at CERN. IFCA is a founding member of the CMS collaboration. ITAINNOVA is an associated institute of CMS since 2012. IMB-CNM researchers are CMS members invited through IFCA since 2014. The activities, results, and participation of these three institutes in CMS over the last years, together with a tangible representation in different work and groups and governing bodies, vouche for the feasibility of this proposal.
The operation of the detector during the high luminosity phase of the accelerator poses extremely challenging constrains both in terms of radiation tolerance of sensors (and their associated electronics) and for the accurate reconstruction of tracks and vertices, with a high track multiplicity and up to 200 inelastic proton-proton scatterings during each proton bunch crossing. To mitigate these effects, the vertex detector or Inner Tracker (IT) will use pixel sensors fabricated in silicon using a 3D technology, highly resistant to radiation and with a larger granularity compared to the current detector. In addition, a new detector called MIP Timing Detector (MTD) will provide a high precision timestamp (a few tens of ps) for tracks coming from the different proton scatterings, in order to facilitate the discrimination of multiple event vertices. The forward regions of this detector are called Endcap Timing Layer (ETL), and they will use silicon sensors with integrated gain (LGAD, Low Gain Avalanche Detectors).
For the innermost layers of the IT, the 3D pixel technology is proposed, which is intrinsically resistant to radiation. IMB-CNM is one of the two remaining providers of this technology in the qualification process within a CMS Market Survey. Besides sensor production, and independently of the choice of technology for the innermost layers, we will also contribute to system and integration aspects, including the serial power distribution, design and fabrication of flexible high-density interconnects (HDI) and studies of the readout ASIC power elements and of electromagnetic compatibility. Finally, we will perform the integration of approximately 500 functional IT modules, and will work on detector optimization aspects through simulations and track reconstruction performance studies. Through these activities, the three groups will be able to contribute jointly towards the CMS collaboration with completely functional 1×2 modules.
The ETL will be instrumented with LGAD sensors, which reach an adequate timing precision thanks to a very fast signal rise time and a large signal-to-noise ratio. IMB-CNM is one of a few centers worldwide able to fabricate these sensors, and will perform part the production of LGAD sensors for the CMS ETL. We will also perform the integration of approximately 900 fully functional modules and will work on detector optimization aspects through simulations and track reconstruction performance studies.
CNM Principal Investigators: Dr. Salvador Hidalgo Villena and Dr. David Flores Gual
Starting date and duration: September 2021 – 3 years