From April 19 to 22, 2026, the 27th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2026) took place in Warsaw, Poland. The conference addressed results from fundamental research and industrial applications in thermal, mechanical, and multiphysics simulation and experimental analysis of micro- and nanoelectronics and microsystems.

Two PDS PhD students, Eusebio Rodrigo and Pierre Gallarday, presented complementary research on the electro-thermal behaviour of power devices, spanning both Si VDMOS and Ga₂O₃-based technologies.

On Tuesday 21, Pierre Gallarday presented his work “Efficient Space Charge Current Injection in Silicon Implanted Fe-doped Beta-Ga₂O₃ Crystals Resulting in Extremely Low Thermal Breakdown Field” during the poster session. In this work, he shows that in Fe-doped β-Ga₂O₃ with a Si-implanted channel, SCLC-driven transport induces pronounced localized Joule heating. This leads to early thermal breakdown while opening opportunities for low-power localized heating applications.

On Wednesday 22, Eusebio Rodrigo presented his work “Thermal and Electrical Simulations of Rad-hard Si VDMOS Transistors” in an oral session. In this work, he shows that the buffer layer in radiation-hardened Si VDMOS significantly affects heat spreading and temperature distribution. This reveals critical regions of localized heating and highlights the need for careful electro-thermal optimization in radiation environments.

Furthermore, Miquel Vellvehi, a researcher at IMB-CNM, was a member of the Scientific Committee and chaired the Thermal Experimental Characterization session during the conference.