Impact of Si ion implantation on α-Ga2O3 and β-Ga2O3 lateral MESFET transistors

Aniol Vellvehí, Pierre Gallarday, Edgars Butanovs, Vincent Sallet, José Rebollo, Josep Montserrat, Edvards Strods, Martins Zubkins, Lauris Dimitrocenko, Corine Sartel, Ekaterine Chikoidze, Xavier Perpiña, Miquel Vellvehi, Amador Pérez-TomásJournal of Alloys and CompoundsIn this work, the feasibility of Si ion-implantation channel engineering in metastable α-Ga2O3 is directly compared with the well-established...