Prof. Kung-Yen Lee and Pei-Chun Liao from the National Taiwan University Performed a Research Stay at IMB-CNM

Researchers from the PDS Group of IMB-CNM and from the HPDCL of NTU involved in the HIPODEM project. From left to right, first row: Xavier Perpiñà, Kung-Yen Lee, Xavier Jordà, Pei-Chun Liao, Mariana Raya and Emma Solà. Second row: Miquel Vellvehi, Ziyin Sun and Adrià Aroca.

Prof. Kung-Yen Lee, head of the High-Power Devices and Circuits Lab (HPDCL) at the National Taiwan University (NTU) in Taipei, visited IMB-CNM during the last two weeks of July within the framework of the collaborative project “High Power Density Modules of Compound Semiconductors for Efficient Electrification (HiPoDeM).” This project is a joint bilateral mobility initiative aimed at promoting international scientific collaboration between CSIC and Taiwan’s National Science and Technology Council (NSTC), and is funded by both organizations.

Prof. Lee is also Director of the NTU-ITRI Nano Center and has more than two decades of experience in high-power devices, power electronics, and renewable energy. He is internationally recognized for his contributions to the field of SiC power transistors. One of Prof. Lee’s PhD students, Pei-Chun Liao, also carried out a two-week research stay at IMB-CNM. During their visit, both researchers participated in technical seminars together with members of the PDS Group and delivered presentations on their respective research topics. New opportunities for collaboration between HPDCL and PDS were identified, taking advantage of the complementary expertise of both groups.

During his stay, Prof. Lee delivered a lecture entitled “Innovations in High-Power SiC Devices Through Advanced Structures and Characterization,” in which he presented the main achievements of his research group over recent years. These included the development of advanced SiC power transistor structures, as well as their detailed modelling and targeted applications. In addition, Pei-Chun Liao presented the results of her PhD research in a talk entitled “Exploring Topologies in SiC Power MOSFETs: Split-Gate, JBS-Integrated MOSFET, and Hexagonal Layout Designs.”

Finally, on July 24, Prof. Lee gave a talk entitled “Advancing Microelectronics from National Taiwan University to Industry,” providing a comprehensive overview of the semiconductor research ecosystem at NTU, with particular emphasis on next-generation nanoelectronics and compound semiconductors. His presentation generated considerable interest among IMB-CNM staff members, as well as researchers from other institutions.

Prof. Kung-Yen Lee during his talk “Innovations of the High Power SiC Devices via Structures and Characterization”, describing the main achievements of his research group.

Pei-Chun Liao during his talk “Exploring Topologies in SiC Power MOSFETs: Split Gate, JBS integrated MOSFET, and Hexagonal Layout Designs” about the main contributions of her PhD research.

Prof. Lee during his talk “Advancing Microelectronics from National Taiwan University to Industries” in the “Pepe Millán” meeting room at IMB-CNM.